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 SM ISO690:2012CROITORU, Mihail, GLADILIN, Vladimir, FOMIN, Vladimir, DEVREESE, Josef T., MAGNUS, Wim, SCHOENMAKER, Wim J., SOREE, Bart. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor. In: Journal of Applied Physics, 2003, vol. 93, pp. 1230-1240. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.1533108 |
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  Journal of Applied Physics |
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| Volumul 93 / 2003 / ISSN 0021-8979 /ISSNe 1089-7550 | ||||||
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| DOI:https://doi.org/10.1063/1.1533108 | ||||||
| Pag. 1230-1240 | ||||||
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The quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor was studied. The extraction of quantum-mechanical features of the transport was done from the numerical solution of the quantum Liouville equation in the Wigner function representation. The device characteristics were obtained as a function of a channel length by taking into account the electron scattering due to ionized impurities and surface roughness at the Si/SiO2 interface. |
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| Cuvinte-cheie Engineering controlled terms Electric currents, Electron scattering, Electron transport properties, Hamiltonians, Interfaces (materials), Nanostructured materials, Quantum theory, Silicon on insulator technology Engineering uncontrolled terms Quantum transport Engineering main heading MOSFET devices |
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