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 SM ISO690:2012VERLAN, Victor, BUZURNIUC, Svetlana, MALAHOV, Ludmila. Technology of mixed amorphous As2(Sx Se1-x)3 from chemical solutions and their optical properties. In: Physica Status Solidi (C) Current Topics in Solid State Physics, 2011, vol. 8, pp. 2717-2720. ISSN 1862-6351. DOI: https://doi.org/10.1002/pssc.201084142 |
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 Physica Status Solidi (C) Current Topics in Solid State Physics |
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| Volumul 8 / 2011 / ISSN 1862-6351 /ISSNe 1610-1642 | ||||||
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| DOI:https://doi.org/10.1002/pssc.201084142 | ||||||
| Pag. 2717-2720 | ||||||
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Thin layers of amorphous chalcogenides semiconductors of mixed composition As2(SxSe1-x)3 for x in the interval 0-1 were obtained from chemical solutions of amorphous compounds arsenic selenide (As2Se3) and arsenic sulfide (As2S2). Their optical properties (optical transmittance and recording of holographic information) were studied. The photodarkening of layers and shift of absorption edge in infrared (IR) area of spectra were found at ultra-violet (UV) and actinic irradiations. Maximum efficiency of holographic writing of diffraction gratings (with Ar laser recording, λ = 488 nm) on thin layers is 2.5% and after additional processing in the negative etching is 36%. |
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| Cuvinte-cheie Amorphous chalcogenide semiconductor, Deposition from solution, photosensitive media |
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