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 SM ISO690:2012IVANOVA, Galina, KASIYAN, Vladimir, NEDEOGLO, Dumitru, OPRYA, S.. The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence. In: Semiconductors, 1998, vol. 32, pp. 154-159. ISSN 1063-7826. DOI: https://doi.org/10.1134/1.1187337 |
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  Semiconductors |
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| Volumul 32 / 1998 / ISSN 1063-7826 | ||||||
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| DOI:https://doi.org/10.1134/1.1187337 | ||||||
| Pag. 154-159 | ||||||
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The photoluminescence and luminescence excitation spectra of copper-doped n-ZnSe crystals were investigated in the temperature range 77-400 K during diffusion of the copper into the crystal from the liquid, gas, and and solid phases. It is shown that the structure of the associative centers responsible for emission in the red and green regions of the spectrum depends on the method of copper doping. It is established that during the interphase interaction on the (ZnSe crystal)-(copper film) boundary, zinc atoms dissolve in the copper film and the copper atoms diffuse into the zinc selenide crystal. |
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| Cuvinte-cheie Annealing, ceramics, emissions |
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