Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
121 1 |
Ultima descărcare din IBN: 2024-02-23 08:45 |
SM ISO690:2012 AVDONIN, A., IVANOVA, Galina, IURIEVA, Tatiana, KOLIBABA, Gleb, NEDEOGLO, Dumitru, NEDEOGLO, Natalia, SIRKELI, Vadim. Infrared radiation of zinc selenide single crystals. In: Journal of Luminescence, 2005, vol. 114, pp. 9-14. ISSN 0022-2313. DOI: https://doi.org/10.1016/j.jlumin.2004.11.006 |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Journal of Luminescence | ||||||
Volumul 114 / 2005 / ISSN 0022-2313 | ||||||
|
||||||
DOI:https://doi.org/10.1016/j.jlumin.2004.11.006 | ||||||
Pag. 9-14 | ||||||
|
||||||
Rezumat | ||||||
Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300 K. A narrow band of infrared (IR) radiation centered at 878 nm (1.411 eV) manifests itself in the low-temperature PL spectrum. It is established that this band intensity first increases and then decreases with increasing concentration of doping impurity. With increasing excitation radiation intensity, spectral position of the IR PL band is unchanged and its intensity increases under the linear law. With increasing excitation radiation wavelength, the IR PL band intensity increases, it becomes narrower and shifts towards long wavelengths. It is shown that the observed IR radiation is caused by recombination of free electrons with holes localized on associative acceptors (VZn-Aui+)- in the ZnSe:Zn:Au crystals or (VZn-D+)- in the undoped crystals. |
||||||
Cuvinte-cheie Associative defects, Infrared photoluminescence |
||||||
|
DataCite XML Export
<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1016/j.jlumin.2004.11.006</identifier> <creators> <creator> <creatorName>Avdonin, A.N.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Ivanova, G.N.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Iurieva, T.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Colibaba, G.V.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nedeoglo, D.D.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Nedeoglo, N.D.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Sirkeli, V.P.</creatorName> <affiliation>Universitatea de Stat din Moldova, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>Infrared radiation of zinc selenide single crystals</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2005</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0022-2313</relatedIdentifier> <subjects> <subject>Associative defects</subject> <subject>Infrared photoluminescence</subject> </subjects> <dates> <date dateType='Issued'>2005-07-01</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>Long-wave photoluminescence (PL) spectra of both as-grown and Au-doped n-ZnSe single crystals are studied in the temperature range from 81 to 300 K. A narrow band of infrared (IR) radiation centered at 878 nm (1.411 eV) manifests itself in the low-temperature PL spectrum. It is established that this band intensity first increases and then decreases with increasing concentration of doping impurity. With increasing excitation radiation intensity, spectral position of the IR PL band is unchanged and its intensity increases under the linear law. With increasing excitation radiation wavelength, the IR PL band intensity increases, it becomes narrower and shifts towards long wavelengths. It is shown that the observed IR radiation is caused by recombination of free electrons with holes localized on associative acceptors (VZn-Aui+)- in the ZnSe:Zn:Au crystals or (VZn-D+)- in the undoped crystals. </p></description> </descriptions> <formats> <format>application/pdf</format> </formats> </resource>