Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
113 0 |
SM ISO690:2012 KASIYAN, Vladimir, NEDEOGLO, Dumitru, NEDEOGLO, Natalia. Native defect nature of electrical centres in low-resistivity zinc selenide. In: Physica Status Solidi (B) Basic Research, 1998, vol. 210, pp. 485-489. ISSN 0370-1972. DOI: https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<485::AID-PSSB485>3.0.CO;2-9 |
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Physica Status Solidi (B) Basic Research | ||||||
Volumul 210 / 1998 / ISSN 0370-1972 | ||||||
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DOI:https://doi.org/10.1002/(SICI)1521-3951(199812)210:2<485::AID-PSSB485>3.0.CO;2-9 | ||||||
Pag. 485-489 | ||||||
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Hall effect, electric conductivity and electron mobility in n-ZnSe crystals, annealed in Zn melt at temperatures from 500 to 950°C, are studied in the temperature range from 55 to 500 K. The sharp increase of the shallow donor concentration is accompanied by a decrease of their compensation from K = NA/ND = 0.91 to 0.35, and of the activation energy ED from 28 to 9 meV, as the annealing temperature of n-ZnSe crystals increases above 650°C. At low annealing temperatures, the conductivity of n-ZnSe is determined by shallow non-controlling donors such as AlZn, GaZn, InZn. The concentration of VZn native defects compensating the shallow donors is sharply decreased and the concentration of the VSe shallow donors determining the conductivity of crystal is sharply increased, as the annealing temperature increases above 800°C. The decrease of annealing temperature of the samples below 650°C results in a drastic decrease of the conductivity of the crystal, a decrease of electron concentration, and abnormally low mobility values. The observed anomalies of transport effects are found to be caused by the presence of a random potential relief in n-ZnSe samples. |
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Cuvinte-cheie iron, Ferrous Ion, Mid-Infrared |
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