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 SM ISO690:2012AVDONIN, A.. Electron mobility in ZnSe single crystals. In: Physica Status Solidi (B) Basic Research, 2003, vol. 238, pp. 45-53. ISSN 0370-1972. DOI: https://doi.org/10.1002/pssb.200306590 |
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  Physica Status Solidi (B) Basic Research |
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| Volumul 238 / 2003 / ISSN 0370-1972 | ||||||
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| DOI:https://doi.org/10.1002/pssb.200306590 | ||||||
| Pag. 45-53 | ||||||
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Temperature dependence of electron mobility in n-ZnSe single crystals is investigated in the temperature range 77-300 K. A comparative analysis of experimental data with the known theoretical dependences calculated using solution of the Boltzmann transport equation and taking into consideration all major scattering mechanisms and screening effects is carried out. The good agreement between the experimental and theoretical dependences of electron mobility on both temperature and electron concentration is observed for the samples with various compensation ratios. It is shown that parameters such as the ionized impurity concentration and acceptor concentration can quickly be estimated for strongly compensated samples. |
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| Cuvinte-cheie Zinc selenide, gallium arsenide, Quantum well lasers |
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