| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012NEDEOGLO, Natalia, LAIHO, Reino, LASHKUL, Alexander V., LÄHDERANTA, Erkki, SHAKHOV, Mikhail. Influence of the magnetic field on the conductivity within the Coulomb gap of n-ZnSe single crystals doped with Ag. In: Semiconductor Science and Technology, 2006, vol. 21, pp. 1335-1340. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/21/9/020 |
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  Semiconductor Science and Technology |
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| Volumul 21 / 2006 / ISSN 0268-1242 | |
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| DOI:https://doi.org/10.1088/0268-1242/21/9/020 | |
| Pag. 1335-1340 | |
| Rezumat | |
The conductivity and magnetoresistance of undoped and Ag-doped n-ZnSe single crystals are investigated in pulsed magnetic fields up to 20 T at temperatures between 1.5 and 300 K. In fields below 10 T, the resistivity is found to obey the temperature dependence ρ(T) ≤ ρ 0exp{T0/T}1/2 indicating variable range hopping (VRH) conductivity over the states of the Coulomb gap in the vicinity of the Fermi level. In low fields, a region of negative magnetoresistivity (NMR) is observed and attributed to the increasing density of states around the Fermi level in a magnetic field. As the magnetic field increases, NMR is gradually cancelled by exponentially increasing the contribution of positive magnetoresistivity (PMR) caused by shrinking of the impurity electron wavefunctions. Values of the localization radius of the electron wavefunction, a, and the dielectric constant, κ, are obtained from analysis of the PMR data. Both a and κ increase when approaching the metal-insulator (MI) transition, at which the ratio of the critical indices ν κ/νa ≤ 3.5 is found. |
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| Cuvinte-cheie Fermi level, Magnetic field effects, Magnetoresistance, Nuclear Magnetic Resonance, Semiconductor doping, Silver, Thermal effects |
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