| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 139 0 |
 SM ISO690:2012TIGINYANU, Ion, IRMER, Gert, MONECKE, Jochen, VOGT, Alexander, HARTNAGEL, Hans Ludwig. Porosity-induced modification of the phonon spectrum of n-GaAs. In: Semiconductor Science and Technology, 1997, vol. 12, pp. 491-493. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/12/4/001 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
  Semiconductor Science and Technology |
||||||
| Volumul 12 / 1997 / ISSN 0268-1242 | ||||||
|
||||||
| DOI:https://doi.org/10.1088/0268-1242/12/4/001 | ||||||
| Pag. 491-493 | ||||||
|
||||||
| Rezumat | ||||||
Porous GaAs layers have been produced by anodic etching of (100)-oriented crystalline substrates in a H2SO4 solution. Scanning electron microscope images showed the formation of submicron pores, the average dimension of the remaining GaAs walls being of about 100 nm. Raman scattering by LO-phonon-plasmon coupled modes, inherent in as-grown crystals, was not observed in the porous layers. Proposed explanations are either the depletion of the GaAs skeleton due to the surface space-charge effect or the decoupling of the LO-phonon and the plasmon modes at the relative large wavevectors transferred in nanostructures. A new Raman scattering peak at 275 cm-1, located between the bulk TO and LO frequencies, has been observed in porous layers and attributed to a surface-related phonon. |
||||||
| Cuvinte-cheie Crystal growth, Crystal orientation, etching, Nanostructured materials, phonons, porosity, porous materials, Raman scattering, scanning electron microscopy, Substrates, sulfuric acid |
||||||
|
|
|
|
