| Conţinutul numărului revistei |
| Articolul precedent |
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 159 0 |
 SM ISO690:2012TIGINYANU, Ion, IRMER, Gert, MONECKE, Jochen, VOGT, Alexander, HARTNAGEL, Hans Ludwig. Porosity-induced modification of the phonon spectrum of n-GaAs. In: Semiconductor Science and Technology, 1997, vol. 12, pp. 491-493. ISSN 0268-1242. DOI: https://doi.org/10.1088/0268-1242/12/4/001 |
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  Semiconductor Science and Technology |
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| Volumul 12 / 1997 / ISSN 0268-1242 | ||||||
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| DOI:https://doi.org/10.1088/0268-1242/12/4/001 | ||||||
| Pag. 491-493 | ||||||
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Porous GaAs layers have been produced by anodic etching of (100)-oriented crystalline substrates in a H2SO4 solution. Scanning electron microscope images showed the formation of submicron pores, the average dimension of the remaining GaAs walls being of about 100 nm. Raman scattering by LO-phonon-plasmon coupled modes, inherent in as-grown crystals, was not observed in the porous layers. Proposed explanations are either the depletion of the GaAs skeleton due to the surface space-charge effect or the decoupling of the LO-phonon and the plasmon modes at the relative large wavevectors transferred in nanostructures. A new Raman scattering peak at 275 cm-1, located between the bulk TO and LO frequencies, has been observed in porous layers and attributed to a surface-related phonon. |
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| Cuvinte-cheie Crystal growth, Crystal orientation, etching, Nanostructured materials, phonons, porosity, porous materials, Raman scattering, scanning electron microscopy, Substrates, sulfuric acid |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Irmer, G.</dc:creator> <dc:creator>Monecke, J.</dc:creator> <dc:creator>Vogt, A.</dc:creator> <dc:creator>Hartnagel, H.</dc:creator> <dc:date>1997-04-01</dc:date> <dc:description xml:lang='en'><p>Porous GaAs layers have been produced by anodic etching of (100)-oriented crystalline substrates in a H<sub>2</sub>SO<sub>4</sub> solution. Scanning electron microscope images showed the formation of submicron pores, the average dimension of the remaining GaAs walls being of about 100 nm. Raman scattering by LO-phonon-plasmon coupled modes, inherent in as-grown crystals, was not observed in the porous layers. Proposed explanations are either the depletion of the GaAs skeleton due to the surface space-charge effect or the decoupling of the LO-phonon and the plasmon modes at the relative large wavevectors transferred in nanostructures. A new Raman scattering peak at 275 cm<sup>-1</sup>, located between the bulk TO and LO frequencies, has been observed in porous layers and attributed to a surface-related phonon.</p></dc:description> <dc:identifier>10.1088/0268-1242/12/4/001</dc:identifier> <dc:source>Semiconductor Science and Technology () 491-493</dc:source> <dc:subject>Crystal growth</dc:subject> <dc:subject>Crystal orientation</dc:subject> <dc:subject>etching</dc:subject> <dc:subject>Nanostructured materials</dc:subject> <dc:subject>phonons</dc:subject> <dc:subject>porosity</dc:subject> <dc:subject>porous materials</dc:subject> <dc:subject>Raman scattering</dc:subject> <dc:subject>scanning electron microscopy</dc:subject> <dc:subject>Substrates</dc:subject> <dc:subject>sulfuric acid</dc:subject> <dc:title>Porosity-induced modification of the phonon spectrum of n-GaAs</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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