Model of Raman scattering in self-assembled InAs GaAs quantum dots
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KLIMIN, Serghei, FOMIN, Vladimir, DEVREESE, Josef T., BIMBERG, Dieter H.. Model of Raman scattering in self-assembled InAs GaAs quantum dots. In: Physical Review B - Condensed Matter and Materials Physics, 2008, vol. 77, p. 0. ISSN 1098-0121. DOI: https://doi.org/10.1103/PhysRevB.77.045307
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Physical Review B - Condensed Matter and Materials Physics
Volumul 77 / 2008 / ISSN 1098-0121 /ISSNe 1550-235X

Model of Raman scattering in self-assembled InAs GaAs quantum dots

DOI:https://doi.org/10.1103/PhysRevB.77.045307

Pag. 0-0

Klimin Serghei12, Fomin Vladimir123, Devreese Josef T.13, Bimberg Dieter H.4
 
1 University of Antwerp,
2 Moldova State University,
3 Eindhoven University of Technology,
4 Technische Universität Berlin
 
 
Disponibil în IBN: 4 iulie 2023


Rezumat

Multiphonon resonant Raman scattering in self-assembled quantum disks is investigated using a nonadiabatic approach. The optical phonons and the electron-phonon interaction are considered within the multimode dielectric continuum model. The model exploits both electrostatic and mechanical boundary conditions for the relative ionic displacement vector, as well as the phonon spatial dispersion in bulk. The confined phonon modes in a quantum dot are hybrids of bulklike and interface vibrations. It is shown that nonadiabatic effects substantially increase the Raman scattering probabilities and the relative multiphonon integral intensities with respect to the one-phonon intensity. The calculated ratio of the two- and one-phonon integral intensities is close to the experimental value for self-organized InAs GaAs quantum dots. 

Cuvinte-cheie
quantum dots, Gene Conversion, phonon