| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012LEONTIE, Liviu, EVTODIEV, Igor, NEDEFF, Valentin, STAMATE, Marius D., CARAMAN, Mihail. Photoelectric properties of Bi2O3/GaSe heterojunctions. In: Applied Physics Letters, 2009, vol. 94, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.3035854 |
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  Applied Physics Letters |
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| Volumul 94 / 2009 / ISSN 0003-6951 | ||||||
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| DOI:https://doi.org/10.1063/1.3035854 | ||||||
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Photoelectrical characteristics and photoluminescence of n-Bi 2O3/p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85-3.10 eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe. |
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| Cuvinte-cheie Bismuth compounds, Heterojunctions, layered semiconductors, Selenium compounds |
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