The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling
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ROTARU, Corneliu, VATAVU, Sergiu, FEDOROV, Vladimir, GASHIN, Peter A., LUX-STEINER, Martha Ch. H., FEREKIDES, Christos S., RUSU, Marin. The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling. In: IEEE Photovoltaic Specialists Conference (PVSC), Ed. 39, 16-21 iunie 2013, Denver. Institute of Electrical and Electronics Engineers, 2013, Ediția 39, pp. 2034-2038. ISBN 9781479905119, 1479905119. DOI: https://doi.org/10.1109/PVSC.2013.6744872
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IEEE Photovoltaic Specialists Conference (PVSC)
Ediția 39, 2013
Conferința "IEEE 39th Photovoltaic Specialists Conference (PVSC)"
39, Denver, Statele Unite ale Americii, 16-21 iunie 2013

The investigation of TCO/CdS/CdTe heterojunctions by C-U and C-f measurements: Experiment and modeling

DOI:https://doi.org/10.1109/PVSC.2013.6744872

Pag. 2034-2038

Rotaru Corneliu1, Vatavu Sergiu12, Fedorov Vladimir1, Gashin Peter A.1, Lux-Steiner Martha Ch. H.3, Ferekides Christos S.2, Rusu Marin12
 
1 Moldova State University,
2 University of South Florida,
3 Helmholtz-Zentrum Berlin für Materialien und Energie
 
 
Disponibil în IBN: 12 iunie 2023


Rezumat

The paper presents the analysis of C-U and C-f data obtained in the 1 kHz-10 MHz range for CdS/CdTe heterojunctions prepared by CSS onto (ZnO:Al, ZnO:Al/i-ZnO)/Glass substrates. An attempt to model the physical properties of the heterojunctions is made. A small signal analysis has been carried out to establish the equivalent circuit of device. The unusual capacitance behavior of the ZnO based heterojunction is attributed to presence of the barrier at the back contact.

Cuvinte-cheie
Cadmium compounds, capacitance, Capacitance-voltage characteristics, heterojunction, photovoltaic cells, Semiconductor device modeling