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 SM ISO690:2012KOROTCHENKOV, Ghenadii, SYSOEV, Victor. Nanowire-based photodetectors for visible-UV spectral region. New York: 2023, pp. 371-398. ISBN 978-303120510-1, 978-303120509-5DOI: 10.1007/978-3-031-20510-1_16 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors | ||||||
| 2 / 2023 / ISBN 978-303120510-1, 978-303120509-5 | ||||||
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| DOI:https://doi.org/10.1007/978-3-031-20510-1_16 | ||||||
| Pag. 371-398 | ||||||
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In recent decades, there has been great interest in the development of various devices based on 1D nanostructures, such as nanowires (NWs), nanotubes (NTs), nanoribbons (NRs) and nanobelts (NBs). Such devices also include photodetectors for the visual and UV spectral range, developed on the basis of II-VI compounds such as CdTe, CdSe, CdS, ZnSe, ZnTe, ZnS. The analysis carried out in this chapter shows that the use of 1D nanostructures instead of bulk and thin-film materials in the manufacture of photodetectors can indeed lead to an improvement in their parameters. Individual NWs photoconductive detectors, phototransistors, detectors based on heterostructures, such as core-shells, 1D axial, crossed nanowire structures, and Schottky barrier-based photodetectors were used as objects for consideration in this analysis. The photosensitivity mechanism of 1D nanostructures and the manufacturing features of 1D nanostructures-based photodetectors are also discussed in this chapter. Problems that arise during the development of photodetectors based on 1D nanostructures are also considered in this chapter. |
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| Cuvinte-cheie 1D axial, 1D nanostructures, Band-bending, CdS, CdS/CdS:SnS2, CdS/CdSSe, CdS/Si, CdS/ZnTe, CdSe, CdSe/ZnTe, CdSxSe1-x, CdTe, contacts, Core-shells, Crossed, Debye length, Decay time, Detectivity, Direct integration, doping, Electron-holes pairs, External quantum efficiency, Fabrication, Gain, Ge/CdS, heterostructures, Hierarchical, II-VI semiconductor-based heterostructures, II-VI semiconductors, II-VI ternary alloys, In-plane geometry, individual, light intensity, Mechanism of photosensitivity, nanobelts, Nanoribbons, nanotubes, nanowires, NW array, NW bridges, NW-based heterostructures, NW-based photodetectors, NW-substrate, Oxygen molecules, performance, Photoconductive, Photodesorption, Photodetectors parameters, Photodetectors types, Photogeneration, Photoresponse, Phototransistive gain, Phototransistors, response time, Responsivity, Schottky barrier, sensitivity, Single NW, Spectral photoresponse, Surface trap states, synthesis, Tunable, Vertical architecture, ZnO/ZnS, ZnO/ZnSe, ZnS, ZnS/CdS, ZnS/InP, ZnS/Si, ZnS/ZnO, ZnS0.49Se0.51/ZnSe, ZnSe, ZnSe/Si, ZnSe/ZnO, ZnSe:Sb/ZnO, ZnSxSe1-x, ZnTe, ZnxCd1-xSe |
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