 195 0 |
 SM ISO690:2012KOROTCHENKOV, Ghenadii, SEMIKINA, Tetyana. Photodetectors based on II-VI multicomponent alloys . New York: 2023, pp. 349-367. ISBN 978-303120510-1, 978-303120509-5DOI: 10.1007/978-3-031-20510-1_15 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors | ||||||
| 2 / 2023 / ISBN 978-303120510-1, 978-303120509-5 | ||||||
|
||||||
| DOI:https://doi.org/10.1007/978-3-031-20510-1_15 | ||||||
| Pag. 349-367 | ||||||
|
||||||
| Rezumat | ||||||
This chapter is devoted to the consideration of the specifics of using II-VI-based multicomponent alloys in the development of photodetectors of various types. It is shown that usage of multicomponent alloys gives the possibility to significantly improve the parameters of both solar cells and detectors of visible and ultraviolet radiation. In particular, based on this approach, it was possible to significantly increase the solar cells efficiency and develop selective detectors that are sensitive in the required spectral region. The use of ternary and quaternary II-VI-based alloys allows to match the lattice parameters of II-VI and III-V compounds, which is necessary for the manufacture of monolithic optoelectronic devices which use the advantages of both types of semiconductor materials. Optimization of the electrophysical and physical properties of II-VI compounds, or giving them new properties via introduction of additional components, is another direction in the study of multicomponent II-VI compounds. Implementation examples are given and advantages of various II-VI-based multicomponent alloys for specific applications are analyzed. |
||||||
| Cuvinte-cheie Band gap engineering, Bottom cell, Buffer layer, Cd1-x-yHgxMnyTe, Cd1-xCrxTe, Cd1-xMnxTe, Cd1-xZnxTe (CZT), CdS, CdS-CdSxTe1-x-CdTe, CdSTe, CdTe, CdZnS, Core-shell nanobelt-based photodetectors, Cu2ZnSnS4, CZT:Cu, Detectors for visible range, Diluted magnetic semiconductors, doping, GaAs, GaN, GAP, Hg1-xCdxTe, II-VI semiconductor optimization, II-VI-based multicomponent alloys, Injection photodetector, InSb, Lattice matching, Metal-semiconductor-metal (MSM) photodetectors, MnTe, Nanowire-based detector, optimization, photodetectors, Photoresponse rate, Schottky barrier detectors, Selectivity, Semiconductors, Si, Solar cells, Solution processing, spintronics, Tandem solar sell, Top cell, UV detectors, Wide bandgap window, Zn1-xCrxTe, Zn1-xMgxS, Zn1-xMnxS, ZnBeSe, ZnMgBeSe, ZnMgTe, ZnMnSe, ZnS, ZnSe, ZnSeTe, ZnSSe, ZnSTe, ZnTe, ZnTe:Cu |
||||||
|
|
|
|
