New trends and approaches in the development of photonic IR detector technology

Korotchenkov Ghenadii; Pronin Igor

200

SM ISO690:2012

KOROTCHENKOV, Ghenadii, PRONIN, Igor. New trends and approaches in the development of photonic IR detector technology . New York: 2023, pp. 107-133. ISBN 978-303120510-1, 978-303120509-5DOI: 10.1007/978-3-031-20510-1_5

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Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors: Volume 2, Photodetectors

2 / 2023 / ISBN 978-303120510-1, 978-303120509-5

New trends and approaches in the development of photonic IR detector technology

DOI:https://doi.org/10.1007/978-3-031-20510-1_5

Pag. 107-133

Korotchenkov Ghenadii¹, Pronin Igor²

¹ Moldova State University,
² Penza State University

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Menționat în lucrare: (US) U01 AI077957-01 NIAID RFA-AI-08-001 Testele rapide pentru aprecierea rezistenţei şi depistarea tuberculozei cu rezistenţă extinsă

Disponibil în IBN: 30 mai 2023

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Rezumat

This chapter focuses on new trends in the development of photon detectors and photodetectors arrays based on them. In particular, new strategies in the development of IR photodetectors are analyzed, which include the development of detectors such as high operating temperature detectors, quantum well infrared photodetectors, type-II strained-layer superlattices, barrier detectors, multistage or cascade IR detectors, quantum dot infrared photodetectors, multicolor IR detectors, and photon trapping detectors. The possibilities of manufacturing IR detectors based on semiconductor nanowires and 2D materials are also considered. The advantages and limitations of these approaches in the development of an IR photodetector are discussed as well.

Cuvinte-cheie
2D materials, advantages, advantages, advantages, advantages, advantages, Barrier IR detectors, Bias-selectable detector, GaAs/AlGaAs structures, graphene, HgCdTe, High operating temperature (HOT) detectors, Immersion lenses, InAs/GaSb, limitations, limitations, MEMS optical filters, Mesa structures, Multi-stage or cascade IR detectors, Multicolor IR detectors, Nanowire-based photodetectors, NBn structure, NBp structure, Non-equilibrium mode of operation, Photon trapping detectors, Quantum dot IR photodetectors, Quantum well IR photodetectors, transition metal dichalcogenides, Two-color pixel, Type-II strained-layer superlattice, Unipolar barrier

ISBN: 978-303120510-1, 978-303120509-5

DOI: 10.1007/978-3-031-20510-1_5

Domenii științifice:

Tehnică

Alte contribuții (capitole, secțiuni ale cărții / culegerii) disponibile în IBN

Handbook of II-VI semiconductor-based sensors and radiation detectors: Volume 2, photodetectors DOI: 10.1007/978-3-031-20510-1 Korotchenkov Ghenadii		1-13
Introduction in IR detectors DOI: 10.1007/978-3-031-20510-1_1 Korotchenkov Ghenadii		3-22
Preface Korotchenkov Ghenadii		5-7
IR detectors array DOI: 10.1007/978-3-031-20510-1_4 Korotchenkov Ghenadii		79-106
ZnSe-based photodetectors DOI: 10.1007/978-3-031-20510-1_13 Korotchenkov Ghenadii		301-332
Photodetectors based on II-VI multicomponent alloys DOI: 10.1007/978-3-031-20510-1_15 Korotchenkov Ghenadii , Semikina Tetyana		349-367
Nanowire-based photodetectors for visible-UV spectral region DOI: 10.1007/978-3-031-20510-1_16 Korotchenkov Ghenadii , Sysoev Victor		371-398
QDs of wide band gap II-VI semiconductors luminescent properties and photodetector applications DOI: 10.1007/978-3-031-20510-1_17 Abdullah Muwaffaq , Al-Nashy Baqer Obeid , Korotchenkov Ghenadii , Al-Khursan Amin Habbeb		399-425
Solution-processed photodetectors DOI: 10.1007/978-3-031-20510-1_18 Mostaque Shaikh Khaled , Kuddus Abdul , Rahman Md. Ferdous , Korotchenkov Ghenadii , Hossain Jaker		427-452