Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
190 0 |
SM ISO690:2012 RADEVICI, Ivan, SUSHKEVICH, Konstantin, HUHTINEN, Hannu, NEDEOGLO, Dumitru, PATURI, Petriina. Influence of the ytterbium doping technique on the luminescent properties of ZnSe single crystals. In: Journal of Luminescence, 2015, vol. 158, pp. 236-242. ISSN 0022-2313. DOI: https://doi.org/10.1016/j.jlumin.2014.10.002 |
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Journal of Luminescence | ||||||
Volumul 158 / 2015 / ISSN 0022-2313 | ||||||
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DOI:https://doi.org/10.1016/j.jlumin.2014.10.002 | ||||||
Pag. 236-242 | ||||||
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Rezumat | ||||||
Luminescent properties of the ytterbium doped zinc selenide crystals with 0.00-8.00 at % concentrations of the Yb impurity within the temperature interval from 6 K to 300 K were studied. Ytterbium doping was performed within three technological processes: during the growth by chemical vapor transport method and by thermal diffusion from the Bi+Yb or Zn+Yb melt. The influence of ytterbium impurity concentration on spectral position and intensity of the various photoluminescent bands in ZnSe emission spectra in visible and infrared range is analyzed. A tendency of ytterbium ions to form associates with background defects was demonstrated. A strong dependence between ytterbium influence on the zinc selenide emission spectra and concentration of selenium vacancies was shown. |
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Cuvinte-cheie Bismuth, defects, iodine, photoluminescence, ZnSe:Yb |
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