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 SM ISO690:2012АНУФРИЕВ, Л., ТУРЦЕВИЧ, А., ГЛУХМАНЧУК, В.. Кинетика осаждения пленок нитрида кремния, получаемого аммонолизом дихлорсилана в реакторе пониженного давления для повышения стабильности и воспроизводимости процесса осаждения. In: Электронная обработка материалов, 2004, nr. 1(40), pp. 75-81. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 1(40) / 2004 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 75-81 | ||||||
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The kinetics of the silicon nitride deposition by ammonolysis of dichlorosilane and the stoichiometry of the films deposited in the temperature range 720 - 8500 C with a y value of an ammonia flow-dichlorosilane ratio in the range of 3 to 15 and pressure 20 to 133 Pa is discussed. It is found that in the explored range of T, P, y the films are stoichiometric silicon nitride with retractive index 1,95 ± 0,05 and density 2,72 to 3,11g/cm3. The mechanism explaining the variable nature of deposition rate- y relations in the area of relatively small and large flows of dichlorosilane is proposed. The obtained results were used to optimize the procedure of capacitor silicon nitride deposition for non-power electronics. |
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