Кинетика осаждения пленок нитрида кремния, получаемого аммонолизом дихлорсилана в реакторе пониженного давления для повышения стабильности и воспроизводимости процесса осаждения

Ануфриев Л.; Турцевич А.; Глухманчук В.

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Articolul precedent

Articolul urmator

191

SM ISO690:2012

АНУФРИЕВ, Л., ТУРЦЕВИЧ, А., ГЛУХМАНЧУК, В.. Кинетика осаждения пленок нитрида кремния, получаемого аммонолизом дихлорсилана в реакторе пониженного давления для повышения стабильности и воспроизводимости процесса осаждения. In: Электронная обработка материалов, 2004, nr. 1(40), pp. 75-81. ISSN 0013-5739.

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Электронная обработка материалов

Numărul 1(40) / 2004 / ISSN 0013-5739 /ISSNe 2345-1718

Кинетика осаждения пленок нитрида кремния, получаемого аммонолизом дихлорсилана в реакторе пониженного давления для повышения стабильности и воспроизводимости процесса осаждения

Pag. 75-81

Ануфриев Л., Турцевич А., Глухманчук В.

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Disponibil în IBN: 10 aprilie 2023

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The kinetics of the silicon nitride deposition by ammonolysis of dichlorosilane and the stoichiometry of the films deposited in the temperature range 720 - 850⁰C with a y value of an ammonia flow-dichlorosilane ratio in the range of 3 to 15 and pressure 20 to 133 Pa is discussed. It is found that in the explored range of T, P, y the films are stoichiometric silicon nitride with retractive index 1,95 ± 0,05 and density 2,72 to 3,11g/cm3. The mechanism explaining the variable nature of deposition rate- y relations in the area of relatively small and large flows of dichlorosilane is proposed. The obtained results were used to optimize the procedure of capacitor silicon nitride deposition for non-power electronics.

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