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 SM ISO690:2012ДИКУСАР, Александр, БРУК, Л., МОНАЙКО, Э., ШЕРБАН, Д., СИМАШКЕВИЧ, Алексей, ТИГИНЯНУ, И.. Фотоэлектрические структуры на основе нанопористого p-InP . In: Электронная обработка материалов, 2008, nr. 1(44), pp. 4-9. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 1(44) / 2008 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 4-9 | ||||||
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The possibility for nanostructuring of surfaces of indium phosphide with hole conductivity is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with nanoporous morphology at interface is developed. It is shown, that the investigated structure can form the basis for working out of photovoltaic devices with enhanced active surface |
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