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 SM ISO690:2012PATSYUK, Vladimir, SPRINCEAN, Galina. A Comparasion of Some Numerical Methods for Semiconductor Device Problem. In: Conference on Applied and Industrial Mathematics: CAIM 2017, 14-17 septembrie 2017, Iași. Chișinău: Casa Editorial-Poligrafică „Bons Offices”, 2017, Ediţia 25, pp. 33-34. ISBN 978-9975-76-247-2. |
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| Conference on Applied and Industrial Mathematics Ediţia 25, 2017 |
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Conferința "Conference on Applied and Industrial Mathematics" Iași, Romania, 14-17 septembrie 2017 | ||||||
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The considered problem consists in determination of semiconductor diode parameters. The mathematical formulation of the problem is based on Drift-Diffusion model [1]. The model is given by a set of equations for three unknown functions: ' - the electrostatic potential, n, p the concentrations for electrons and holes, respectively. These functions ', n, p are to satisfy the following system of nonlinear di erential equations. |
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