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SM ISO690:2012 POSTICA, Vasile, SCHUTT, Fabian, LUPAN, Cristian, KRUGER, Helge, ADELUNG, Rainer, LUPAN, Oleg. Electrical Characterization of Individual Boron Nitride Nanowall Structures. In: IFMBE Proceedings: . 5th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 5, 3-5 noiembrie 2021, Chişinău. Chişinău: Pontos, 2022, Ediția 5, Vol.87, pp. 17-23. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-92328-0_3 |
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IFMBE Proceedings Ediția 5, Vol.87, 2022 |
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Conferința "Conference on Nanotechnologies and Biomedical Engineering" 5, Chişinău, Moldova, 3-5 noiembrie 2021 | |||||||
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DOI:https://doi.org/10.1007/978-3-030-92328-0_3 | |||||||
Pag. 17-23 | |||||||
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In this work, the individual hexagonal boron nitride (h-BN) microtubular structures with different diameter (ranging from ≈0.2 to ≈2.5 μm) and a wall thickness below 25 nm were investigated for the first time by integration on SiO2/Si substrate using a method based on focused ion beam deposition (FIB/SEM). The current-voltage (I-V) measurements were carried out in from a bias of −40 V to +40 V and in a temperature range from 25 to 100 ℃. All fabricated devices showed excellent insulating properties and the resistance of ≈111 GΩ was calculated, which was attributed mainly to the top SiO2 layer of the substrate measured without h-BN. The obtained results elucidate the excellent potential of the boron nitride microtubular structures with nanowalls to be used as high-quality shielding materials of other nano- and microstructures for application in nanoelectronics, nanophotonics and power electronics, where a relatively wide range of operating temperature is necessary. |
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Cuvinte-cheie Electrical properties, Hexagonal boron nitride, Insulator, Microdevices, Microtubes, nanomaterials |
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