Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets

Kolibaba Gleb; Rusnac Dumitru; Fedorov Vladimir; Costriucova Natalia; Monaico Eduard; Potlog Tamara

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KOLIBABA, Gleb, RUSNAC, Dumitru, FEDOROV, Vladimir, COSTRIUCOVA, Natalia, MONAICO, Eduard, POTLOG, Tamara. Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets. In: IFMBE Proceedings: . 5th International Conference on Nanotechnologies and Biomedical Engineering, Ed. 5, 3-5 noiembrie 2021, Chişinău. Chişinău: Pontos, 2022, Ediția 5, Vol.87, pp. 110-116. ISSN 16800737. DOI: https://doi.org/10.1007/978-3-030-92328-0_15

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IFMBE Proceedings
Ediția 5, Vol.87, 2022

Conferința "Conference on Nanotechnologies and Biomedical Engineering"
5, Chişinău, Moldova, 3-5 noiembrie 2021

Highly Conductive ZnO Thin Films Deposited Using CVT Ceramics as Magnetron Targets

DOI:https://doi.org/10.1007/978-3-030-92328-0_15

Pag. 110-116

Kolibaba Gleb¹², Rusnac Dumitru¹², Fedorov Vladimir³, Costriucova Natalia², Monaico Eduard⁴, Potlog Tamara¹

¹ Moldova State University,
² Institute of Applied Physics,
³ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
⁴ Technical University of Moldova

Proiecte:

GA 810652

Promoting smart specialization at the Technical University of Moldova by developing the field of Novel Nanomaterials for BioMedical Applications through excellence in research and twinning

Disponibil în IBN: 26 ianuarie 2022

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Rezumat

Sintering of ZnO + Me₂O₃ (Me = Al, Ga, In) powder via chemical vapor transport based on HCl has been developed. The electrical properties of ZnO thin films obtained by DC magnetron sputtering of ZnO ceramic targets have been studied. Transparency, morphology, crystallinity and crystallite size of thin films have also been investigated. ZnO:Ga thin films with a resistivity of 2.5 × 10^–4 Ω⋅cm have been successfully obtained. The films doped with Al have lower conductivity due to weak sputtering of insoluble Al₂O₃ dielectric inclusions in ceramics. In the case of sintering of ZnO together with In₂O₃, a significant loss of the doping material is observed.

Cuvinte-cheie
Alumina, aluminum oxide, Chlorine compounds, Conductive films, Crystallinity, crystallite size, Electron transport properties, II-VI semiconductors, Indium compounds, Metallic films, morphology, Optical films, Semiconductor doping, sintering, thin films, Transport properties, zinc oxide