Activation ability of Gd dopant in the ZnSe single crystals
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GONCEARENCO, Evghenii, ROSTAS , Arpad Mihai, GALCA, Aurelian Catalin, KOLIBABA, Gleb, NEDEOGLO, Dumitru. Activation ability of Gd dopant in the ZnSe single crystals. In: Journal of Luminescence, 2021, vol. 238, p. 0. ISSN 0022-2313. DOI: https://doi.org/10.1016/j.jlumin.2021.118314
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Journal of Luminescence
Volumul 238 / 2021 / ISSN 0022-2313

Activation ability of Gd dopant in the ZnSe single crystals

DOI:https://doi.org/10.1016/j.jlumin.2021.118314

Pag. 0-0

Goncearenco Evghenii12, Rostas Arpad Mihai3, Galca Aurelian Catalin3, Kolibaba Gleb1, Nedeoglo Dumitru1
 
1 Moldova State University,
2 National Institute for Laser, Plasma and Radiation Physics (INFLPR),
3 National Institute of Materials Physics Bucharest-Magurele
 
 
Disponibil în IBN: 21 iulie 2021


Rezumat

Rare-earth elements are widely used as doping materials as they considerably change the semiconductor optical, electrical, magnetic and radiative properties. This work explores the influence of Gadolinium (Gd) as a dopant on the radiative, optical and magnetic properties of the Zinc Selenide (ZnSe). ZnSe single crystals were grown by the physical transport method and doped during the growth process using a GdSe source. A wide range of characterization equipment was employed to analyze the obtained ZnSe:Gd single crystals. Intracenter radiative transition of the Gd has not been detected. Gd ions activate the background impurities, causing radiative transitions from the conduction band to the Cu2+ level and intracenter transitions within V3+, V2+ and Cr2+ ions. At the same time, the edge band intensity is dependent on the dopant concentration. Optical transmittance decreases, but the position of the fundamental absorption band is unchanged. Single crystals have a zinc blende crystal structure, and Gd ions do not form complexes with native defects or background impurities. 

Cuvinte-cheie
EPR, Gadolinium, LIBS, Luminescence, Rare-earth, XRD, ZnSe

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<title xml:lang='en'>Activation ability of Gd dopant in the ZnSe single crystals</title>
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<publicationYear>2021</publicationYear>
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<subject>EPR</subject>
<subject>Gadolinium</subject>
<subject>LIBS</subject>
<subject>Luminescence</subject>
<subject>Rare-earth</subject>
<subject>XRD</subject>
<subject>ZnSe</subject>
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<description xml:lang='en' descriptionType='Abstract'><p>Rare-earth elements are widely used as doping materials as they considerably change the semiconductor optical, electrical, magnetic and radiative properties. This work explores the influence of Gadolinium (Gd) as a dopant on the radiative, optical and magnetic properties of the Zinc Selenide (ZnSe). ZnSe single crystals were grown by the physical transport method and doped during the growth process using a GdSe source. A wide range of characterization equipment was employed to analyze the obtained ZnSe:Gd single crystals. Intracenter radiative transition of the Gd has not been detected. Gd ions activate the background impurities, causing radiative transitions from the conduction band to the Cu<sup>2+</sup>&nbsp;level and intracenter transitions within V<sup>3+</sup>, V<sup>2+</sup>&nbsp;and Cr<sup>2+</sup>&nbsp;ions. At the same time, the edge band intensity is dependent on the dopant concentration. Optical transmittance decreases, but the position of the fundamental absorption band is unchanged. Single crystals have a zinc blende crystal structure, and Gd ions do not form complexes with native defects or background impurities.&nbsp;</p></description>
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