In bismuth and bismuth - antimony alloys by shaning antimony concentration it is possible to various the energies overlapping the conduction L - band and the valence T - band in Bi and energy gap in Bi1-xSbx over a wide range. Feature doping antimony, is that displacement L and T - bands thus is equivalent. The purpose of the given work was studying of display of dimensional effects in thermopower and resistance in nanowires Вi-2%Sb, in a "semimetal" phase when overlapping L and T bands has decreased in comparison with pure bismuth. Nanowires Вi-2%Sb in a glass cover turned out moulding from a liquid phase on a method Ulitovsky. The method of angular diagrammes of rotation transverse magnitoresistance in weak magnetic fields was used for definition of orientation of samples which corresponded to a direction (1011) along an axis of Вi- 2at%Sb wires as well as in nanowires pure Bi, received by a similar method. Oscillations ShdH on longitudinal magnitoresistance R (H) have shown, that L - electronic ellipsoids decreased at doping Sb, and ShdH oscillations from Т - carriers were not observed to magnetic fields 14Т. It is established, that, as well as in nanowires of pure bismuth temperature dependence R (T) and α (T) show essential dependence on diameter of nanowires d. Transition to "semi-conductor" dependence R (T) in nanowires Вi- 2at%Sb occurs at much big diameters, than in nanowires pure Вi (Fig. 1). This fact reflects display of quantum dimensional effect leading to displacement of borders of bands of conductivity L and valence band Т on a scale energy upwards and downwards accordingly.Fig. 1 Temperature dependences of the resistance- R(T) (a) x=0, and thermopower- a(T) (b) , ξ=2.1% for wires of Bi0.98Sb0,02. d=100nm.It is shown, that the elastic stretching leads to strengthening of the electronic contribution, and in thermopower to change of a sign with (+) on (-) in the field of low temperatures and to increase thermopower on absolute value in the field of heats, as well as in nanowires pure Bi (Fig. 1). Results of researches spent on nanowires Вi– 2at%Sb show, that by means of researches thickness and concentration dependences R (T) and α (T) it is possible to divide influence of reduction of overlapping L and Т bands into electric and thermoelectric properties, for the account of quantum dimensional effect and for the account doping nanowires of bismuth an isovalency impurity.