Optical and structural properties of n− and p−InSe/In2O3 heterostructures
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
386 0
SM ISO690:2012
VATAVU-CUCULESCU, Elmira, LEONTIE, Liviu, CARAMAN, Iuliana, SPRINCEAN, Veaceslav, UNTILA, Dumitru, DOROFTEI, Corneliu, CARAMAN, Mihail. Optical and structural properties of n− and p−InSe/In2O3 heterostructures. In: Journal of Luminescence, 2020, vol. 227, p. 0. ISSN 0022-2313. DOI: https://doi.org/10.1016/j.jlumin.2020.117550
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Journal of Luminescence
Volumul 227 / 2020 / ISSN 0022-2313

Optical and structural properties of n− and p−InSe/In2O3 heterostructures

DOI: https://doi.org/10.1016/j.jlumin.2020.117550

Pag. 0-0

Vatavu-Cuculescu Elmira1, Leontie Liviu2, Caraman Iuliana3, Sprincean Veaceslav1, Untila Dumitru1, Doroftei Corneliu2, Caraman Mihail1
 
1 Moldova State University,
2 Alexandru Ioan Cuza University of Iaşi,
3 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu"
 
Disponibil în IBN: 27 august 2020


Rezumat

In this work crystal structure and surface morphology, photoluminescence and fundamental optical absorption of n− InSe and p−InSe:Cd (0.05 at. %) single crystals and related heterojunctions with native oxide (In2O3) formed by surface oxidation are investigated. Oxidation-induced defects and Cd impurities shield exciton bonds, contribute to the increase of fundamental absorption, and determine photoluminescence features of InSe layer from the n (p)−InSe/In2O3 interface. Doping-induced impurity states and structural defects in the interfacial InSe layer are determining factors for the photon absorption at energies below the band gap.Impurity photoluminescence of interfacial InSe layer originates from donor−acceptor pair recombinations, for inter-pair distance much greater than thickness of elementary Se–In–In–Se packings. The violet−red emission band is determined by nonequilibrium charge carrier recombination in the interfacial In2O3 layer. Its intensity and shape are determined by structural defects at the p−InSe surface.

Cuvinte-cheie
Chalcogenides, Heterojunctions, Luminescence, optical properties, SEM, single crystals