Afiliat la Харьковский национальный университет им. В. Н. Каразина
Gunn diodes based on graded-gap semiconductor nitrides with boron nitride |
Storozhenko Igor , Timanyuk V. , Yaroshenko A. , Arkusha Yu. |
Telecommunications, Electronics and Informatics |
Ed. 5. 2015. Chișinău, Republica Moldova. . 151-154. |
Disponibil online 21 May, 2018 |
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