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 SM ISO690:2012IHOR, Storozhenko, TIMANYUK, V., YAROSHENKO, A., ARKUSHA, Yu.. Gunn diodes based on graded-gap semiconductor nitrides with boron nitride. In: Telecommunications, Electronics and Informatics, Ed. 5, 20-23 mai 2015, Chișinău. Chișinău, Republica Moldova: 2015, Ed. 5, pp. 151-154. ISBN 978-9975-45-377-6. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Telecommunications, Electronics and Informatics Ed. 5, 2015 |
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Conferința "Telecommunications, Electronics and Informatics" 5, Chișinău, Moldova, 20-23 mai 2015 | ||||||
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The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InBN and GaBN graded gap semiconductor compounds at different BN distribution. We had obtained the output characteristics of diodes in a wide range of frequencies from 30 to 700 GHz. Cutoff frequency has been estimated. At optimal BN distribution graded-gap semiconductor InBN and GaBN Gunn diodes for efficiency exceed GaN and InN diodes by more than two times. Power consumption of gradedgap InBN and GaBN diodes is 11¸19% less the power consumption of InN аnd GaN diodes. |
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| Cuvinte-cheie Terahertz range, transfer electron device, gradedgap semiconductor, nitride semiconductor, intervalley electron transfer, boron nitride, indium nitride, Gallium nitride |
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