Cuvinte-cheie (29): Gunn diodes (2), Telecommunication technologies
Engineering main heading
Technology (1), Mm waves (1)
Scopus Author IDProperties of barrier contacts with nanosize TiB x layers to InP ![]() ![]() ![]() ![]() |
Arsentyev Ivan1 , Bobyl A.1 ![]() ![]() ![]() ![]() ![]() ![]() |
1 Ioffe Physical-Technical Institute of the Russian Academy of Sciences i, 2 State Enterprise Research Institute “Orion”, 3 V.E. Lashkaryov Institute of Semiconductor Physics of the National Academy of Science of Ukraine, 4 Institute of Applied Physics, Academy of Sciences of Moldova |
Semiconductors |
Vol. 42, / 2008 / ISSN 1063-7826 |
Disponibil online 17 October, 2023. Descarcări-0. Vizualizări-138 |