Afiliat la Физико-технический институт имени А.Ф.Иоффе РАН

2008 - 1

Properties of barrier contacts with nanosize TiB x layers to InP

Arsentiev Ivan , Bobyl A. , Tarasov Ilya , Boltovets N. , Ivanov V. , Beleaev Alexander , Kamalov A. , Konakova Raisa , Kudryk Ya. , Litvin O. , Milenin Viktor , Rusu Emil

Semiconductors

Vol. 42, / 2008 / ISSN 1063-7826

Disponibil online 17 October, 2023

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2005 - 2

New manufacturing technology for InP epitaxial layers and properties of schottky diodes made on their basis

Arsentiev Ivan , Boltovets N. , Bobyl A. , Ivanov V. , Konakova Raisa , Kudryk Ya. , Litvin O. , Milenin Viktor , Tarasov Ilya , Beleaev Alexander , Rusu Emil

Moldavian Journal of the Physical Sciences

Nr. 4(4) / 2005 / ISSN 1810-648X / ISSNe 2537-6365

Disponibil online 29 November, 2013

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New technological possibilities for formation of GaAs and InP epitaxial layers for Gunn diodes

Arsentiev Ivan , Beleaev Alexander , Bobyl A. , Boltovets N. , Ivanov V. , Konakova Raisa , Konnikov Samuil , Kudryk Ya. , Milenin Viktor , Tarasov Ilya , Markovsky E. , Rusu Emil

International Crimean Conference "Microwave and Telecommunication Technology"

Ediția 15, Vol.2. 2005. Sevastopol. Weber Publishing Co.. 633-634.

Disponibil online 17 June, 2024

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