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Afisarea articolelor 1-2(2) pentru cuvîntul-cheie "Semiconducting indium phosphide" , Anul: 1998
Correlation between chemical composition of transitional layer and electra-physical properties of Me-n-InP Schottky barriers
Korotcenkov Ghenadie, Bejan Nicolae
Technical University of Moldova
Proceedings of the International Semiconductor Conference
Vol. 1. 1998. New Jersey. DOI 10.1109/SMICND.1998.732248.
Disponibil online 5 December, 2023. Descarcări-0. Vizualizări-109
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Dosimetric characteristics of the indium phosphide based photoconvertors
Andronic Ion, Simaşchevici Alexei, Potlog Tamara, Şerban Dormidont, Chetruş Petru
Moldova State University
Proceedings of the International Semiconductor Conference
Vol. 2. 1998. New Jersey. DOI 10.1109/SMICND.1998.732248.
Disponibil online 5 December, 2023. Descarcări-0. Vizualizări-158
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