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SM ISO690:2012

Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

Pocatilov Evghenii12, Nica Denis1, Balandin Alexander A.1

1 University of California, Riverside, 2 Moldova State University

Applied Physics Letters

Nr. / 2006 / ISSN 0003-6951

Disponibil online 16 June, 2023. Descarcări-0. Vizualizări-111

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Built-in field effect on the electron mobility in AlN/GaN/AlN quantum wells

Pocatilov Evghenii12, Nica Denis12, Balandin Alexander A.1

1 University of California, Riverside, 2 Moldova State University

Applied Physics Letters

Nr. / 2006 / ISSN 0003-6951

Disponibil online 15 June, 2023. Descarcări-0. Vizualizări-177

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Role of boundary roughness in the electronic transport of Bi nanowires

Huber Tito1, Nikolaeva Albina23, Ghiţu Dumitru2, Konopko Leonid23, Graf Michael J.4

2 Institute of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova,

Journal of Applied Physics

Nr. / 2008 / ISSN 0021-8979 /ISSNe 1089-7550

Disponibil online 6 November, 2023. Descarcări-1. Vizualizări-101

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Size-quantized oscillations of the electron mobility limited by the optical and confined acoustic phonons in the nanoscale heterostructures

Pocatilov Evghenii1, Nica Denis1, Ascherov Artur2, Balandin Alexander A.1

1 University of California, Riverside, 2 Moldova State University

Journal of Applied Physics

Nr. / 2007 / ISSN 0021-8979 /ISSNe 1089-7550

Disponibil online 3 November, 2023. Descarcări-0. Vizualizări-90

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Electron configuration and charge state of electrically active Cu, Ag and Au ions in ZnSe

Nedeoglo Natalia123, Sirkeli Vadim1, Nedeoglo Dumitru1, Laiho Reino2, Lahderanta Erkki3

1 Moldova State University, 2 Wihuri Physical Laboratory, University of Turku,

Journal of Physics Condensed Matter

Nr. / 2006 / ISSN 0953-8984 /ISSNe 1361-648X

Disponibil online 5 March, 2024. Descarcări-0. Vizualizări-62

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Shubnikov-de Haas effect in n-CdSb:In under pressure

Laiho Reino1, Lashkul Alexander V.2, Lisunov Constantin123, Lahderanta Erkki2

1 Wihuri Physical Laboratory, University of Turku, 3 Institute of Applied Physics, Academy of Sciences of Moldova

Semiconductor Science and Technology

Nr. / 2009 / ISSN 0268-1242

Disponibil online 6 September, 2023. Descarcări-0. Vizualizări-139

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Shallow donor states of Ag impurity in ZnSe single crystals

Laiho Reino1, Lashkul Alexander V.2, Lahderanta Erkki3, Nedeoglo Dumitru4, Nedeoglo Natalia134, Shakhov Mihail15

1 Wihuri Physical Laboratory, University of Turku, 4 Moldova State University, 5 Ioffe Physical-Technical Institute of the Russian Academy of Sciences i

Semiconductor Science and Technology

Nr. / 2006 / ISSN 0268-1242

Disponibil online 5 September, 2023. Descarcări-0. Vizualizări-113

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Characteristics of photoconductivity relaxation in InP:Fe single crystals

Georgobiani Anatoly1, Mikulenok A.1, Tighineanu Ion2, Ursachi Veaceslav2

1 P. N. Lebedev Physical Institute of RAS, 2 Institute of Applied Physics, Academy of Sciences of Moldova

Soviet physics. Semiconductors

Nr. / 1984 / ISSN 0038-5700

Disponibil online 26 January, 2024. Descarcări-0. Vizualizări-51

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