Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
1130 6 |
Ultima descărcare din IBN: 2022-10-20 22:14 |
SM ISO690:2012 EVTODIEV, Igor, RUSU, Dragoş-Bogdan, CARAMAN, Iuliana, LAZAR, G, STAMATE, Maria, DAFINEI, Adrian, VATAVU-CUCULESCU, Elmira. The optical properties of ZnO:Al films deposited on the (0001) surface of ε-GaSe single crystals
. In: Moldavian Journal of the Physical Sciences, 2011, nr. 2(10), pp. 201-207. ISSN 1810-648X. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Moldavian Journal of the Physical Sciences | ||||||
Numărul 2(10) / 2011 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
|
||||||
Pag. 201-207 | ||||||
|
||||||
Descarcă PDF | ||||||
Rezumat | ||||||
ZnO:Al-GaSe:Cd heterojunctions were obtained by the thermal treatment of Cd-doped
GaSe lamellae covered with a Zn nanometric layer containing different Al concentrations. The
heterostructures were structurally (XRD) and optically (reflection spectra and dielectric
permittivity for 1.5÷5.0 eV) analyzed. |
||||||
|
Crossref XML Export
<?xml version='1.0' encoding='utf-8'?> <doi_batch version='4.3.7' xmlns='http://www.crossref.org/schema/4.3.7' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.crossref.org/schema/4.3.7 http://www.crossref.org/schema/deposit/crossref4.3.7.xsd'> <head> <doi_batch_id>ibn-4369</doi_batch_id> <timestamp>1714194428</timestamp> <depositor> <depositor_name>Information Society Development Instiute, Republic of Moldova</depositor_name> <email_address>idsi@asm.md</email_address> </depositor> <registrant>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu"</registrant> </head> <body> <journal> <journal_metadata> <full_title>Moldavian Journal of the Physical Sciences</full_title> <issn media_type='print'>1810648X</issn> </journal_metadata> <journal_issue> <publication_date media_type='print'> <year>2011</year> </publication_date> <issue>2(10)</issue> </journal_issue> <journal_article publication_type='full_text'><titles> <title>The optical properties of ZnO:Al films deposited on the (0001) surface of ε-GaSe single crystals </title> </titles> <contributors> <person_name sequence='first' contributor_role='author'> <given_name>Igor</given_name> <surname>Evtodiev</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Dragoş-Bogdan</given_name> <surname>Rusu</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Iuliana</given_name> <surname>Caraman</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>G</given_name> <surname>Lazar</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Maria</given_name> <surname>Stamate</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Adrian</given_name> <surname>Dafinei</surname> </person_name> <person_name sequence='additional' contributor_role='author'> <given_name>Elmira</given_name> <surname>Vatavu-Cuculescu</surname> </person_name> </contributors> <publication_date media_type='print'> <year>2011</year> </publication_date> <pages> <first_page>201</first_page> <last_page>207</last_page> </pages> </journal_article> </journal> </body> </doi_batch>