| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
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 SM ISO690:2012KOLIBABA, Gleb, RUSNAC, Dumitru, FEDOROV, Vladimir, PETRENKO, Peter A., MONAICO, Eduard. Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport. In: Journal of the European Ceramic Society, 2021, nr. 1(41), pp. 443-450. ISSN 0955-2219. DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.08.002 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Journal of the European Ceramic Society | ||||||
| Numărul 1(41) / 2021 / ISSN 0955-2219 /ISSNe 1873-619X | ||||||
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| DOI:https://doi.org/10.1016/j.jeurceramsoc.2020.08.002 | ||||||
| Pag. 443-450 | ||||||
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A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm3, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10–3 Ω⋅cm has been synthesized. The solubility limit of the Ga2O3 dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa2O4 spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10–4 Ω⋅cm can be grown by DC magnetron sputtering of the synthesized ceramics. |
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| Cuvinte-cheie Conductive ceramics, Doping by Ga, Halide vapor transport, Highly, thin films, zinc oxide, ZnO |
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Dublin Core Export
<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Colibaba, G.V.</dc:creator> <dc:creator>Rusnac, D.</dc:creator> <dc:creator>Fedorov, V.</dc:creator> <dc:creator>Petrenko, P.A.</dc:creator> <dc:creator>Monaico, E.V.</dc:creator> <dc:date>2021-01-03</dc:date> <dc:description xml:lang='en'><p>A new technology for sintering a ZnO + Ga<sub>2</sub>O<sub>3</sub> powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm<sup>3</sup>, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10<sup>–3</sup> Ω⋅cm has been synthesized. The solubility limit of the Ga<sub>2</sub>O<sub>3</sub> dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa<sub>2</sub>O<sub>4</sub> spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10<sup>–4</sup> Ω⋅cm can be grown by DC magnetron sputtering of the synthesized ceramics.</p></dc:description> <dc:identifier>10.1016/j.jeurceramsoc.2020.08.002</dc:identifier> <dc:source>Journal of the European Ceramic Society 41 (1) 443-450</dc:source> <dc:subject>Conductive ceramics</dc:subject> <dc:subject>Doping by Ga</dc:subject> <dc:subject>Halide vapor transport</dc:subject> <dc:subject>Highly</dc:subject> <dc:subject>thin films</dc:subject> <dc:subject>zinc oxide</dc:subject> <dc:subject>ZnO</dc:subject> <dc:title>Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>
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