| Conţinutul numărului revistei |
| Articolul precedent |
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 SM ISO690:2012KOLIBABA, Gleb, RUSNAC, Dumitru, FEDOROV, Vladimir, PETRENKO, Peter A., MONAICO, Eduard. Low-temperature sintering of highly conductive ZnO:Ga:Cl ceramics by means of chemical vapor transport. In: Journal of the European Ceramic Society, 2021, nr. 1(41), pp. 443-450. ISSN 0955-2219. DOI: https://doi.org/10.1016/j.jeurceramsoc.2020.08.002 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Journal of the European Ceramic Society | ||||||
| Numărul 1(41) / 2021 / ISSN 0955-2219 /ISSNe 1873-619X | ||||||
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| DOI:https://doi.org/10.1016/j.jeurceramsoc.2020.08.002 | ||||||
| Pag. 443-450 | ||||||
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A new technology for sintering a ZnO + Ga2O3 powder via chemical vapor transport based on HCl has been developed. The proposed sintering method has the following advantages: a low sintering temperature of 1000–1100 °C, there is no need to use of expensive dopant nanopowders, the possibility of multiple re-sintering, and the absence of changes in the diameter of the ceramics after sintering. A ZnO:Ga:Cl ceramics with a density of 5.31 g/cm3, a hardness of 2.0 GPa, and a resistivity of 1.46 × 10–3 Ω⋅cm has been synthesized. The solubility limit of the Ga2O3 dopant has been estimated at about 3 mol %. At a higher doping level, the content of the ZnGa2O4 spinel phase becomes significant. In addition, ZnO:Ga:Cl thin films with a resistivity of 2.77 × 10–4 Ω⋅cm can be grown by DC magnetron sputtering of the synthesized ceramics. |
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| Cuvinte-cheie Conductive ceramics, Doping by Ga, Halide vapor transport, Highly, thin films, zinc oxide, ZnO |
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DataCite XML Export
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