IBN
  



  













    
  


  
Close

Afișare rezultate

SM ISO690:2012
Afisarea articolelor 1-9(9) pentru cuvîntul-cheie "Semiconducting silicon"
Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor
Croitoru Mihail12, Gladilin Vladimir12, Fomin Vladimir123, Devreese Josef T.13, Magnus Wim4, Schoenmaker Wim J.4, Soree Bart4
1 University of Antwerp,
2 Moldova State University,
3 Eindhoven University of Technology,
Journal of Applied Physics
Nr. / 2004 / ISSN 0021-8979 /ISSNe 1089-7550
Disponibil online 2 November, 2023. Descarcări-0. Vizualizări-170
-----------------------------------------------------------------------------------------------------------------------------------
Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures
Pocatilov Evghenii1, Fomin Vladimir123, Balaban Serghei1, Gladilin Vladimir12, Klimin Serghei1, Devreese Josef T.2, Magnus Wim4, Schoenmaker Wim J.4, Collaert Nadine4, van Rossum Marc45, de Meyer Kristin M.45
1 Moldova State University,
2 University of Antwerp,
3 Eindhoven University of Technology,
5 Catholic University of Leuven (KU Leuven)
Journal of Applied Physics
Nr. / 1999 / ISSN 0021-8979 /ISSNe 1089-7550
Disponibil online 26 October, 2023. Descarcări-1. Vizualizări-143
-----------------------------------------------------------------------------------------------------------------------------------
Heterojunction with ZnO polycrystalline thin films for optoelectronic devices applications
Purica Munizer1, Budianu Elena1, Rusu Emil2
1 National Institute for Research and Development in Microtechnology, IMT-Bucharest,
2 Institute of Applied Physics, Academy of Sciences of Moldova
Microelectronic Engineering
Nr. / 2000 / ISSN - /ISSNe 0167-9317
Disponibil online 30 June, 2023. Descarcări-0. Vizualizări-163
-----------------------------------------------------------------------------------------------------------------------------------
Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates
Sia Engkee1, Hao Maosheng1, Chua Soo Jin1, Tighineanu Ion23, Ichizli V.4, Mutamba Kabula4, Hartnagel Hans Ludwig4, Zhang Ji5, Tripathy Sudhiranjan R.5
1 Institute of Materials Research Engineering, Singapore ,
2 Institute of Applied Physics, Academy of Sciences of Moldova,
3 Technical University of Moldova,
5 National University of Singapore
Proceedings of SPIE - The International Society for Optical Engineering
Nr. / 2001 / ISSN 0277-786X /ISSNe 1996-756X
Disponibil online 14 February, 2024. Descarcări-1. Vizualizări-82
-----------------------------------------------------------------------------------------------------------------------------------
Integral gauge pressure sensor with frequency output signal
Beşliu Victor, Canţer Valeriu, Beldiman L., Beşliu Vasile, Coban Ramazan
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of the International Semiconductor Conference
Vol. 2. 1999. New Jersey. DOI 10.1109/SMICND.1999.
Disponibil online 1 December, 2023. Descarcări-0. Vizualizări-157
-----------------------------------------------------------------------------------------------------------------------------------
Epitaxial relations in BaF2 films grown by MBE on Si(111) substrates
Belenciuc Alexandr, Fedorov Alexander, Zencenco V., Lukash V., Vasilyev A.
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of the International Semiconductor Conference
1995. New Jersey. DOI 10.1109/SMICND.1995.
Disponibil online 8 December, 2023. Descarcări-0. Vizualizări-90
-----------------------------------------------------------------------------------------------------------------------------------
A new type of sensor of radiation in a wide range of energy
Andrieş Andrei1, Malcov S.1, Verlan Victor1, Bulgaru M.2
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova
Proceedings of SPIE - The International Society for Optical Engineering
Ediția 5, Vol.3405. 1998. Bellingham, Washington. ISSN 0277-786X.
Disponibil online 7 February, 2024. Descarcări-0. Vizualizări-123
-----------------------------------------------------------------------------------------------------------------------------------
X-ray solid state image device on the base of Me- a-As2Se3-Si structures
Malcov S., Andrieş Andrei, Verlan Victor
Institute of Applied Physics, Academy of Sciences of Moldova
Proceedings of SPIE - The International Society for Optical Engineering
Vol.2654. 1996. Bellingham, Washington. ISSN 0277-786X.
Disponibil online 9 February, 2024. Descarcări-0. Vizualizări-151
-----------------------------------------------------------------------------------------------------------------------------------
Optical hysteresis and nonlinear light absorption in a-Si:H and a-SiC:H thin films
Ciumaş Valentin1, Cojocaru Ion1, Bostan Gheorghe1, Para Gheorghe1, De Cesare Giampiero2, La Monica Sandro2, Maiello Gabriella2, Ferrari Aldo2
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Sapienza University of Rome
Proceedings of SPIE - The International Society for Optical Engineering
Vol.2648. 1995. Bellingham, Washington. ISSN 0277-786X.
Disponibil online 9 February, 2024. Descarcări-0. Vizualizări-113
-----------------------------------------------------------------------------------------------------------------------------------
 
 

1-9 of 9