Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

Pokatilov Evghenii; Fomin Vladimir; Balaban Serghei; Gladilin Vladimir; Klimin Serghei; Devreese Josef T.; Magnus Wim; Schoenmaker Wim J.; Collaert Nadine; van Rossum Marc; de Meyer Kristin M.

Conţinutul numărului revistei

Articolul precedent

Articolul urmator

Ultima descărcare din IBN:
2024-03-21 19:48

SM ISO690:2012

POKATILOV, Evghenii, FOMIN, Vladimir, BALABAN, Serghei, GLADILIN, Vladimir, KLIMIN, Serghei, DEVREESE, Josef T., MAGNUS, Wim, SCHOENMAKER, Wim J., COLLAERT, Nadine, VAN ROSSUM, Marc, DE MEYER, Kristin M.. Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures. In: Journal of Applied Physics, 1999, vol. 85, pp. 6625-6631. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.370171

EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core

Journal of Applied Physics

Volumul 85 / 1999 / ISSN 0021-8979 /ISSNe 1089-7550

Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

DOI:https://doi.org/10.1063/1.370171

Pag. 6625-6631

Pokatilov Evghenii¹, Fomin Vladimir¹²³, Balaban Serghei¹, Gladilin Vladimir¹², Klimin Serghei¹, Devreese Josef T.², Magnus Wim⁴, Schoenmaker Wim J.⁴, Collaert Nadine⁴, van Rossum Marc⁴⁵, de Meyer Kristin M.⁴⁵

¹ Moldova State University,
² University of Antwerp,
³ Eindhoven University of Technology,
⁴ Interuniversity Microelectronics Centre (IMEC),
⁵ Catholic University of Leuven (KU Leuven)

Disponibil în IBN: 26 octombrie 2023

Descarcă PDF

Rezumat

The equilibrium characteristics of a cylindrical MOSFET were investigated. The closed cylindrical gate effectively controls spatial distribution of charge in the channel region even in the case when its length is comparable with the width of p-n junctions between the channel and the source and drain regions. Moreover, it is shown that in the cylindrical structure majority carriers are completely expelled form the channel for lower gate voltages than those encountered in planar structures.

Cuvinte-cheie
Engineering controlled terms Approximation theory, Carrier concentration, charge carriers, MOSFET devices, Partial differential equations, Semiconducting silicon, Semiconductor junctions Engineering uncontrolled terms Hartree approximation, Poisson equation, Schrodinger equation Engineering main heading Semiconductor device structures