Publicaţii peste hotare - 5, Descărcări - 0, Vizualizări - 706
ISO 690-2012
Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing   |
Ursaki Veaceslav  , , Tiginyanu Ion |
| Proceedings of the International Semiconductor Conference |
| Vol. 1. 1998. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 97-100. |
| Disponibil online 6 December, 2023. Descarcări-0. Vizualizări-208 |
Photoluminescence study of growth-related and processing-induced defects in indium phosphide  |
| Favaro Marialuisa L. , Tiginyanu Ion , , , , Ajo David |
| Physica Status Solidi (A) Applied Research |
| Nr. / 1996 / ISSN 0031-8965 / ISSNe 1521-396X |
| Disponibil online 21 November, 2023. Descarcări-0. Vizualizări-104 |
| Zn+/P+ and Zn+/As+ co-implantation in InP single crystals |
| Ursaki Veaceslav , Tiginyanu Ion , , , , Radautsanu Sergiu |
| Proceedings of the International Semiconductor Conference |
| Vol. 2. 1996. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 401-404. |
| Disponibil online 6 December, 2023. Descarcări-0. Vizualizări-144 |
Improvement of InP crystalline perfection by He+-implantation and subsequent annealing  |
| Tiginyanu Ion , , Ursaki Veaceslav |
| Solid State Communications |
| Nr. / 1995 / ISSN 0038-1098 / ISSNe 1879-2766 |
| Disponibil online 9 November, 2023. Descarcări-0. Vizualizări-130 |
| Raman scattering study of Zn+/P+ co-implanted GaAs single crystals |
| Ursaki Veaceslav , , Tiginyanu Ion , , Caluja Yu. , Radautsanu Sergiu |
| Proceedings of the International Semiconductor Conference |
| 1995. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 99-102. |
| Disponibil online 8 December, 2023. Descarcări-0. Vizualizări-120 |
