| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 102 0 |
 SM ISO690:2012FAVARO, Marialuisa L., TIGINYANU, Ion, TERLETSKY, Andrei, HARTNAGEL, Hans Ludwig, ZAPPIA, M., AJO, David. Photoluminescence study of growth-related and processing-induced defects in indium phosphide. In: Physica Status Solidi (A) Applied Research, 1996, vol. 156, pp. 523-532. ISSN 0031-8965. DOI: https://doi.org/10.1002/pssa.2211560230 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Physica Status Solidi (A) Applied Research |
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| Volumul 156 / 1996 / ISSN 0031-8965 /ISSNe 1521-396X | ||||||
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| DOI:https://doi.org/10.1002/pssa.2211560230 | ||||||
| Pag. 523-532 | ||||||
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| Rezumat | ||||||
Low-temperature photoluminescence (PL) spectra of 100 keV He+-implanted n-InP single crystals as well as of 5 MeV α-irradiated n-InP crystals and epilayers have been studied. The radiation-treatment-induced decrease in intensity of bound-excitonic emission was found to be more pronounced than that of free-exciton recombination and luminescence related to deep levels. A new band at 1.399 eV was observed in α-irradiated InP epilayers and attributed to defect complexes involving Inp antisite. The influence of post-implantation annealing in the temperature interval 400 to 750 °C upon PL characteristics of He+-implanted n-InP crystals is reported. |
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| Cuvinte-cheie Annealing, Crystal defects, electron emission, Excitons, Helium, ion implantation, irradiation, photoluminescence, Semiconducting indium compounds, spectroscopy |
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