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| Raman and Hall-effect characterization of Zn+/P+ co-implanted GaAs subjected to rapid thermal annealing |
| , , |
| Proceedings of the International Semiconductor Conference CAS |
| Vol. 1. 1998. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 97-100. |
| Disponibil online 6 December, 2023 |
| Photoluminescence study of growth-related and processing-induced defects in indium phosphide |
| Favaro Marialuisa L. , , , , , Ajo David |
| Physica Status Solidi (A) Applied Research |
| Vol. 156, / 1996 / ISSN 0031-8965 / ISSNe 1521-396X |
| Disponibil online 21 November, 2023 |
| Zn+/P+ and Zn+/As+ co-implantation in InP single crystals |
| , , , , , |
| Proceedings of the International Semiconductor Conference CAS |
| Vol. 2. 1996. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 401-404. |
| Disponibil online 6 December, 2023 |
| Improvement of InP crystalline perfection by He+-implantation and subsequent annealing |
| , , |
| Solid State Communications |
| Vol. 96, / 1995 / ISSN 0038-1098 / ISSNe 1879-2766 |
| Disponibil online 9 November, 2023 |
| Raman scattering study of Zn+/P+ co-implanted GaAs single crystals |
| , , , , Caluja Yu. , |
| Proceedings of the International Semiconductor Conference CAS |
| 1995. New Jersey. Institute of Electrical and Electronics Engineers Inc.. 99-102. |
| Disponibil online 8 December, 2023 |
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