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 SM ISO690:2012PARVAN, Vladimir, MIROVSCHI, Vladimir, MASNIK, Alisa. Large oscillator strength excitons in PbGa2S4 crystals. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 114-116. ISBN 978-9975-66-239-0.. |
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| Nanotechnologies and Biomedical Engineering Editia 1, 2011 |
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Conferința "International Conference on Nanotechnologies and Biomedical Engineering" 1, Chișinău, Moldova, 7-8 iulie 2011 | ||||||
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| Pag. 114-116 | ||||||
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In PbGa2S4 crystals the exciton states with the energy of about 290 meV and high oscillator strength (longitudinal – transversal dissipation of 75 meV) were observed. The ground states of the excitons are not dissociated at the room temperature. At the temperature of 77 K and 8.6 K the ground (n=1) and excited (n=2,3) states of two excitons series A and B are observed. The Bor radius for A excitons is about 70 Å and for B excitons is about 10Å. |
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| Cuvinte-cheie PbGa2S4, excitons series, Bor radius for excitons, excitons with large binding energy and oscillator strength, parameters of excitons |
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