Large oscillator strength excitons in PbGa2S4 crystals

Parvan Vladimir; Mirovschi Vladimir; Masnik Alisa

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2022-12-15 12:12

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PARVAN, Vladimir, MIROVSCHI, Vladimir, MASNIK, Alisa. Large oscillator strength excitons in PbGa2S4 crystals. In: Nanotechnologies and Biomedical Engineering, Ed. 1, 7-8 iulie 2011, Chișinău. Technical University of Moldova, 2011, Editia 1, pp. 114-116. ISBN 978-9975-66-239-0..

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Nanotechnologies and Biomedical Engineering
Editia 1, 2011

Conferința "International Conference on Nanotechnologies and Biomedical Engineering"
1, Chișinău, Moldova, 7-8 iulie 2011

Large oscillator strength excitons in PbGa2S4 crystals

Pag. 114-116

Parvan Vladimir, Mirovschi Vladimir, Masnik Alisa

Technical University of Moldova

Disponibil în IBN: 19 iulie 2019

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Rezumat

In PbGa2S4 crystals the exciton states with the energy of about 290 meV and high oscillator strength (longitudinal – transversal dissipation of 75 meV) were observed. The ground states of the excitons are not dissociated at the room temperature. At the temperature of 77 K and 8.6 K the ground (n=1) and excited (n=2,3) states of two excitons series A and B are observed. The Bor radius for A excitons is about 70 Å and for B excitons is about 10Å.

Cuvinte-cheie
PbGa2S4, excitons series, Bor radius for excitons, excitons with large binding energy and oscillator strength, parameters of excitons

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<dc:creator>Parvan, V.</dc:creator>
<dc:creator>Mirovschi, V.</dc:creator>
<dc:creator>Maşnic, A.A.</dc:creator>
<dc:date>2011</dc:date>
<dc:description xml:lang='en'><p>In PbGa2S4 crystals the exciton states with the energy of about 290 meV and high oscillator strength (longitudinal &ndash; transversal dissipation of 75 meV) were observed. The ground states of the excitons are not dissociated at the room temperature. At the temperature of 77 K and 8.6 K the ground (n=1) and excited (n=2,3) states of two excitons series A and B are observed. The Bor radius for A excitons is about 70 &Aring; and for B excitons is about 10&Aring;.</p></dc:description>
<dc:source>Nanotechnologies and Biomedical Engineering (Editia 1) 114-116</dc:source>
<dc:subject>PbGa2S4</dc:subject>
<dc:subject>excitons series</dc:subject>
<dc:subject>Bor radius for excitons</dc:subject>
<dc:subject>excitons with large binding energy and
oscillator strength</dc:subject>
<dc:subject>parameters of excitons</dc:subject>
<dc:title>Large oscillator strength excitons in PbGa2S4 crystals</dc:title>
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</oai_dc:dc>