Materials for integrated of THz sensors in EWOD chips

Sirbu Lilian; Muller Raluca; Dǎnilǎ Mihai; Schiopu Vasilica; Matei Alina; Comanescu Florin Constantin; Ştefan Angela; Baracu Angela Mihaela; Dascălu Traian

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649

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2020-07-06 16:09

SM ISO690:2012

SIRBU, Lilian, MULLER, Raluca, DǍNILǍ, Mihai, SCHIOPU, Vasilica, MATEI, Alina, COMANESCU, Florin Constantin, ŞTEFAN, Angela, BARACU, Angela Mihaela, DASCĂLU, Traian. Materials for integrated of THz sensors in EWOD chips. In: Microelectronics and Computer Science: The 5th International Conference, Ed. 8, 22-25 octombrie 2014, Chisinau. Chișinău, Republica Moldova: Universitatea Tehnică a Moldovei, 2014, Ediția 8, pp. 102-105. ISBN 978-9975-45-329-5..

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Microelectronics and Computer Science
Ediția 8, 2014

Conferința "Microelectronics and Computer Science"
8, Chisinau, Moldova, 22-25 octombrie 2014

Materials for integrated of THz sensors in EWOD chips

Pag. 102-105

Sirbu Lilian¹, Muller Raluca², Dǎnilǎ Mihai², Schiopu Vasilica², Matei Alina², Comanescu Florin Constantin², Ştefan Angela³, Baracu Angela Mihaela², Dascălu Traian³

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² National Institute for Research and Development in Microtechnologies ,
³ National Institute for Laser, Plasma and Radiation Physics (INFLPR)

Proiecte:

Menționat în lucrare: 13.820.15.17/RoA Emiţătoare şi receptoare matriciale de radiaţie THz pentru circuite integrate hibride

Menționat în lucrare: 12.819.15.20A Dispozitive emiţătoare de lumină în baza nanocopoziţilor organici şi anorganici

Menționat în lucrare: 266515 Preparation for Moldova's integration into the European Research Area and into the Community R&D Framework Programs on the basis of scientific excellence

Disponibil în IBN: 11 aprilie 2019

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Rezumat

We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50–100oC), under constant argon pressure (6.3•10-3 Bar) and RF power (40-100 W).

Cuvinte-cheie
InP film, LT-InP, terahertz (THz) spectroscopy, THz-TDS, ZnO