Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
80 0
SM ISO690:2012
HAJDEU-CHICAROSH, Elena; GUC, Maxim; NELDNER, Kai; GURIEVA, Galina; SCHOR, Susan; ARUSHANOV, Ernest; LISUNOV, Konstantin. Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples. In: Journal of Alloys and Compounds. 2017, nr. 703, pp. 315-320. ISSN 0925-8388.
EXPORT metadate:
Google Scholar
Crossref
CERIF
BibTeX
DataCite
Dublin Core
Journal of Alloys and Compounds
Numărul 703 / 2017 / ISSN 0925-8388

Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples


DOI: 10.1016/j.jallcom.2017.01.352
Pag. 315-320

Hajdeu-Chicarosh Elena1, Guc Maxim1, Neldner Kai2, Gurieva Galina2, Schor Susan23, Arushanov Ernest1, Lisunov Konstantin14
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Helmholtz Zentrum Berlin,
3 Freie University of Berlin,
4 Lappeenranta University of Technology,
 
Disponibil în IBN: 17 decembrie 2018


Rezumat

The resistivity, ρ(T), of Cu2ZnSnS4powder samples, obtained by a solid-state reaction method from pure elements, exhibits an activated character. The Mott variable-range hopping charge transfer is observed between T ∼100–230 K, followed by the conductivity due to activation of holes into the states above the mobility threshold when T is increased. Such behavior, accompanied by semi-width W of the acceptor band, exceeding the mean acceptor energy, indicates overlap of the acceptor band states with those of the valence band, forming a joint near-edge hole spectrum in conditions of the strong degree of the compensation. The details of this spectrum have been determined, including positions of the Fermi level, μ, and the mobility threshold, as well as the density of the localized states at the Fermi level, g (μ). The acceptor concentration and the hole localization radius have been obtained, too. These parameters indicate the material to lie relatively far from the metal-insulator transition.

Cuvinte-cheie
Cu2ZnSnS4, Electronic properties, Energy spectrum, Hopping conductivity, kesterite, Powder samples