Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples

Hajdeu-Chicarosh Elena; Guk Maxim; Neldner Kai; Gurieva Galina; Schor Susan; Arushanov Ernest; Lisunov Konstantin

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Articolul urmator

754

SM ISO690:2012

HAJDEU-CHICAROSH, Elena, GUK, Maxim, NELDNER, Kai, GURIEVA, Galina, SCHOR, Susan, ARUSHANOV, Ernest, LISUNOV, Konstantin. Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples. In: Journal of Alloys and Compounds, 2017, vol. 703, pp. 315-320. ISSN 0925-8388. DOI: https://doi.org/10.1016/j.jallcom.2017.01.352

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Journal of Alloys and Compounds

Volumul 703 / 2017 / ISSN 0925-8388

Mechanisms of conductivity and energy spectrum of near-edge holes in Cu₂ZnSnS₄powder samples

DOI:https://doi.org/10.1016/j.jallcom.2017.01.352

Pag. 315-320

Hajdeu-Chicarosh Elena¹, Guk Maxim¹, Neldner Kai², Gurieva Galina², Schor Susan²³, Arushanov Ernest¹, Lisunov Konstantin¹⁴

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Helmholtz Zentrum Berlin,
³ Free University of Berlin, Germany,
⁴ Lappeenranta University of Technology

Disponibil în IBN: 17 decembrie 2018

Rezumat

The resistivity, ρ(T), of Cu₂ZnSnS₄powder samples, obtained by a solid-state reaction method from pure elements, exhibits an activated character. The Mott variable-range hopping charge transfer is observed between T ∼100–230 K, followed by the conductivity due to activation of holes into the states above the mobility threshold when T is increased. Such behavior, accompanied by semi-width W of the acceptor band, exceeding the mean acceptor energy, indicates overlap of the acceptor band states with those of the valence band, forming a joint near-edge hole spectrum in conditions of the strong degree of the compensation. The details of this spectrum have been determined, including positions of the Fermi level, μ, and the mobility threshold, as well as the density of the localized states at the Fermi level, g (μ). The acceptor concentration and the hole localization radius have been obtained, too. These parameters indicate the material to lie relatively far from the metal-insulator transition.

Cuvinte-cheie
Cu2ZnSnS4, Electronic properties, Energy spectrum, Hopping conductivity, kesterite, Powder samples

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<title xml:lang='en'>Mechanisms of conductivity and energy spectrum of near-edge holes in Cu2ZnSnS4powder samples</title>
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<subject>Cu2ZnSnS4</subject>
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<subject>Energy spectrum</subject>
<subject>Hopping conductivity</subject>
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<description xml:lang='en' descriptionType='Abstract'><p>The resistivity, &rho;(T), of Cu<sub>2</sub>ZnSnS<sub>4</sub>powder samples, obtained by a solid-state reaction method from pure elements, exhibits an activated character. The Mott variable-range hopping charge transfer is observed between T &sim;100&ndash;230&nbsp;K, followed by the conductivity due to activation of holes into the states above the mobility threshold when T is increased. Such behavior, accompanied by semi-width W of the acceptor band, exceeding the mean acceptor energy, indicates overlap of the acceptor band states with those of the valence band, forming a joint near-edge hole spectrum in conditions of the strong degree of the compensation. The details of this spectrum have been determined, including positions of the Fermi level, &mu;, and the mobility threshold, as well as the density of the localized states at the Fermi level, g (&mu;). The acceptor concentration and the hole localization radius have been obtained, too. These parameters indicate the material to lie relatively far from the metal-insulator transition.</p></description>
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