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 SM ISO690:2012EVTODIEV, Igor. Excitonic absorption of the light in heterojunctions Bi2O3-InSe. In: Moldavian Journal of the Physical Sciences, 2009, nr. 2(8), pp. 163-168. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 2(8) / 2009 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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| Pag. 163-168 | ||||||
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The interface layer of the Bi O /InSe:Cd (0.10 at. %) heterojunction was investigated
using optical and electroreflection spectra. The fundamental absorption edge of InSe:Cd
interface layer, at 78 K, is formed by the excitonic absorption band n=1, with maximum at
1.328 eV. Its direct optical band gap corresponds to electron transitions at the M point of the
Brillouin zone, and is equal to 2.557 eV at 78 K. |
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