Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion
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AVDONIN, A., NEDEOGLO, Dumitru, NEDEOGLO, Dumitru, NEDEOGLO, Natalia, SIRKELI, Vadim. Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion. In: Moldavian Journal of the Physical Sciences, 2006, nr. 1(5), pp. 23-26. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 1(5) / 2006 / ISSN 1810-648X /ISSNe 2537-6365

Photoluminescence of n-ZnSe single crystals doped with iodine by vapour phase diffusion


Pag. 23-26

Avdonin A., Nedeoglo Dumitru, Nedeoglo Dumitru, Nedeoglo Natalia, Sirkeli Vadim
 
Moldova State University
 
 
Disponibil în IBN: 13 decembrie 2013


Rezumat

Photoluminescence spectra of n-ZnSe single crystals doped with iodine are investigated in the temperature range from 83 to 300 K. It is shown that the edge PL band is formed by overlapping of the PL lines attributed to ISe donor-bound ecxitons ( I 2 I ) and VZn acceptor- bound excitons ( D 1 I ). A model of radiation mechanisms, which explain the redistribution of the edge and long-wave PL bands intensities with increasing doping level of the samples, is proposed.