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 SM ISO690:2012YOVU, M., SHUTOV, Serghei, REBEJA, S., KOLOMEYKO, Eduard, BOOLCHAND, Punit, POPESCU, Mihai A.. Quenching of photodarkening in metal-doped chalcogenide amorphous films. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 25, 8-12 octombrie 2002, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2002, Vol. 1, Ediția 25, pp. 207-210. ISBN 0780374401. DOI: https://doi.org/10.1109/SMICND.2002.1105832 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 25, 2002 |
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Conferința "25th International Semiconductor Conference" 25, Sinaia, Romania, 8-12 octombrie 2002 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2002.1105832 | ||||||
| Pag. 207-210 | ||||||
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Photodarkening relaxation under light exposure of a-As40Se60 amorphous films doped with 0.5 at.% of metals Sn, Mn, Sm, Pr or Dy and a-As50Se50 films doped up to 10.0 at.% Sn were studied for their dependence on the type and concentration of impurities and thermal treatment. Both factors reduce photodarkening with the degree of reduction dependent on the type and concentration of impurity. The relaxation process may be described by a stretched exponential with the dispersion parameter 0.4≤ α. |
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| Cuvinte-cheie Chalcogenide glass, Degree of reduction, Dispersion parameters, Impurity concentration, light exposure, Stretched exponential, Thermal-annealing, Time constants |
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