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 SM ISO690:2012BUDIANU, Elena, PURICA, Munitzer, RUSU, Emil, MANEA, Elena, GAVRILA, Raluca. Polysilicon thin layers for photovoltaic applications. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 25, 8-12 octombrie 2002, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2002, Vol. 1, Ediția 25, pp. 215-218. ISBN 0780374401. DOI: https://doi.org/10.1109/SMICND.2002.11058234 |
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 Proceedings of the International Semiconductor Conference Vol. 1, Ediția 25, 2002 |
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Conferința "25th International Semiconductor Conference" 25, Sinaia, Romania, 8-12 octombrie 2002 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2002.11058234 | ||||||
| Pag. 215-218 | ||||||
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Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving of good performances and low manufacturing cost. In this paper, the preparation of polysilicon thin layers together with technological process for a p-i-n type photovoltaic cell fabrication are presented. The crystalline structure, surface morphology and optical properties were investigated by AFM technique, X-ray diffraction and spectrophotometer measurements. |
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| Cuvinte-cheie manufacture, morphology, Nanocrystalline materials, optical properties, Photoelectrochemical cells, photovoltaic cells, Polycrystalline materials, Polysilicon, surface morphology, thin films |
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