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 SM ISO690:2012KANTSER, Valeriu, ARAPAN, Sergiu, CÂRLIG, Sergiu, ERMALAI, Felicia. Spin-orbit interaction and spintronics effects in semiconductor structures driven by interband coupling through optical phonon like displacements. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 36, 3-5 octombrie 2005, Sinaia. New Jersey: Institute of Electrical and Electronics Engineers Inc., 2005, Vol. 2, Ediția 28, pp. 263-266. ISBN 0780392140, 978-078039214-4. DOI: https://doi.org/10.1109/SMICND.2005.1558774 |
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 Proceedings of the International Semiconductor Conference Vol. 2, Ediția 28, 2005 |
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Conferința "28th International Semiconductor Conference" 36, Sinaia, Romania, 3-5 octombrie 2005 | ||||||
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| DOI:https://doi.org/10.1109/SMICND.2005.1558774 | ||||||
| Pag. 263-266 | ||||||
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In addition to known channels of spin-orbit interaction (SOI) in semiconductor materials and heterostructures, a new terms of SOI induced by interband coupling through optical phonon like displacement or electrical polarization are proposed and analyzed. Some spintronic particularities of the electronic states and tunneling characteristics related to new SOI terms are studied. Spin Hall Effect driven by coupling of light and heavy hole bands through optical phonon like displacement is studied on the basis of developed Luttinger effective Hamiltonians. |
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| Cuvinte-cheie Electron energy levels, Electron tunneling, Hall effect, Hamiltonians, phonons, polarization |
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