The paper shows the possibility of growing GaSb:(Mn) thin films on silicon substrates by laser ablation. The narrow-gap semiconductor GaSb is one of the actively studied promising materials for the creation of various optoelectronic devices in the infrared region of the spectrum (1.0–2.5 μm), including thermophotovoltaic elements, LEDs, photodiodes, etc. Doping GaSb with ferromagnetic atoms makes it promising for spintronics. However, GaSb is an expensive semiconductor material, and the development of a technology for growing thin films of gallium antimonide on a cheap semiconductor substrate, such as single-crystal silicon, would reduce the cost of a GaSb-based active element. In this regard, the development of a technology for obtaining thin GaSb films on silicon substrates and the study of their physical properties and characteristics are of undoubted interest. The SureliteTM Series model laser with power in the range of 450-850 mJ was used as the energy source. The wavelength of the radiation could be selected discretely at 1064 nm, 532 nm, 355nm and 266 nm outputs. The frequency of the laser pulses was 30 Hz. Using laser ablation technology, thin GaSb:(Mn) layers were obtained. Spectral characteristics and roentgenograms were investigated for the films obtained.